Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure
US7113676B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Dec 6, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/4207
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N−1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved—advantageously within a monolithic…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.