Semiconductor manufacturing using optical ablation
US7115514B2 · kind B2 · utility
17Cited by
159References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Nov 20, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention relates to methods and systems for ablation based material removal configuration for use in semiconductor manufacturing that includes the steps of generating an initial wavelength-swept-with-time optical pulse in an optical pulse generator, amplifying the initial pulse, compressing the amplified pulse to a duration of less than about 10 picoseconds and applying the compressed optical pulse to the wafer surface, to remove material from, e.g., wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.