Method for wet etching of high k thin film at low temperature
US7115526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Mar 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive and negative electrodes on the front side of the LED by etching the p-type semiconductor of the pn junction and forming a strip of negative electrode on the n-type semiconductor, the positive electrode is formed on the p-type semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.