Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
US7115531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2001 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Aug 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.