Semiconductor device and semiconductor device producing system
US7115903B2 · kind B2 · utility
28Cited by
70References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | May 8, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2101/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.