Radiation-emitting semiconductor component

US7115907B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Johannes Baur · Regensburg, DE
• Dominik Eisert · Regensberg, DE
• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Andreas Ploessl · Regensburg, DE
• Wilhelm Stein · Dresden, DE

Key dates

• Filing date: Sep 22, 2003
• Grant date: Oct 3, 2006
• Expiry date: Sep 22, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.