III-nitride light emitting device with reduced polarization fields
US7115908B2 · kind B2 · utility
49Cited by
1References
41Claims
0Family size
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Key dates
| Filing date | Jan 30, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Mar 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m2. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.