Light-emitting diode
US7115915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Sep 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 μm and 150 μm. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.