Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
US7116034B2 · kind B2 · utility
3Cited by
15References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.