Magnetoresistive sensor
US7116533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2006 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Jan 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3259
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.