PN diode optical modulators fabricated in rib waveguides
US7116853B2 · kind B2 · utility
31Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Aug 11, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.