Patent · US Expired

Integrated pressure sensor and method of manufacture

US7117747B2 · kind B2 · utility

7Cited by
15References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 3, 2005
Grant dateOct 10, 2006
Priority date
Expiry dateJan 3, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L19/069
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A technique for manufacturing an integrated pressure sensor includes a number of steps. Initially, a substrate with conductive electrical traces located on first and second sides of the substrate is provided. A plurality of compensation circuits are positioned in an array on the first side of the substrate in electrical contact with one or more of the conductive electrical traces on the first side of the substrate. A plurality of pressure sensors are positioned on the second side of the substrate in electrical contact with one or more of the conductive electrical traces on the second side of the substrate. Each one of the sensors is associated with one of the compensation circuits to form a plurality of pressure sensor-compensation circuit pairs. The substrate includes conductive vias to electrically connect each of the sensor-compensation circuit pairs. Each of the compensation circuits provides temperature compensation for an associated one of the sensors. The sensor-compensation circuit pairs are calibrated and singulated for final packaging.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.