Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices

US7118928B2 · kind B2 · utility

Assignee

• University of Cincinnati · US

Inventors

• Andrew J. Steckl · Cincinnati, US
• Ming Pan · Cincinnati, US

Key dates

• Filing date: Dec 2, 2002
• Grant date: Oct 10, 2006
• Expiry date: Oct 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0361

Abstract

Light-emitting devices having a semiconductor phosphor layer formed by metalorganic chemical vapor deposition (MOCVD). The semiconductor phosphor layer may be any Group III nitride semiconductor compound that is in-situ doped during MOCVD deposition with one or more dopants effective to act as luminescent centers. The MOCVD deposition conditions required for the formation of these extrinsic luminescent films differ significantly from the MOCVD deposition conditions utilized to deposit intrinsic GaN luminescent films.