Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment
US7118943B2 · kind B2 · utility
8Cited by
14References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Oct 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.