Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof
US7118947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Oct 27, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.