Basic material for patterning and patterning method
US7119026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2003 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/1241
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied,D≦L×{1+2(cos θ2−cos θ1)} (1)where D is a droplet diameter, L is a pattern width, θ1 is a first contact angle, and θ2 is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.