Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure

US7119358B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Peter Werner · Oberursel, DE
• Viatcheslav Egorov · Saint Petersburg, RU
• Vadim Talalaev · Saint Petersburg, RU
• George Cirlin · Saint Petersburg, RU
• Nikolai Zakharov · Bodenwerder, DE

Key dates

• Filing date: Nov 25, 2003
• Grant date: Oct 10, 2006
• Expiry date: Nov 25, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 μm, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.