Luminescence stabilization of anodically oxidized porous silicon layers
US7119361B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Nov 2, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.