Electro-absorption modulated laser with high operating temperature tolerance
US7120183B2 · kind B2 · utility
4Cited by
14References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Apr 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06804
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.