Precursors for depositing silicon containing films and processes thereof
US7122222B2 · kind B2 · utility
604Cited by
12References
19Claims
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Key dates
| Filing date | Oct 27, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Aug 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:[R12N—NH]nSi(R2)4−nwhere each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.