Manufacturing method of semiconductor device
US7122463B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When the occurrence of the bowing is controlled through the etching conditions, a change in etching conditions causes the bowing. Another problem is a requirement of the larger-sized apparatus for the substrate with a larger diameter in order to allow a whole substrate being subjected equally to the conditions under which no bowing occurs.In the present invention, a first etching is stopped at a depth where no bowing occurs to form an opening section. Next, a protective film for etching is formed on a region of the wall surface of the hole in the opening section where a bowing is liable to appear when an opening is formed further.After that, a second etching is carried out to form an opening further, and thereby a minute opening with an aspect ratio of 13 or higher is made, while suppressing the occurrence of the bowing well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.