Aluminum nitride materials and members for use in the production of semiconductors
US7122490B2 · kind B2 · utility
11Cited by
5References
35Claims
0Family size
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Key dates
| Filing date | Feb 24, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.