Semiconductor light emitting devices with graded composition light emitting layers
US7122839B2 · kind B2 · utility
18Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Dec 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.