Control of stress in metal films by controlling the atmosphere during film deposition
US7122872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Oct 10, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/017
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Materials such as titanium are vapor-deposited in the presence of, e.g., oxygen to form a film on a substrate, such as to provide an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface. The resulting film contains titanium and oxygen. Varying the conditions under which the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the oxygen partial pressure when the film is deposited. In one embodiment, the oxygen partial pressure in the atmosphere present during titanium deposition is greater than about 2×10−7 Torr, and preferably between about 1×10−6 Torr and about 2×10−6 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.