Pulsed plasma CVD method for forming a film
US7125588B2 · kind B2 · utility
9Cited by
69References
17Claims
0Family size
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Key dates
| Filing date | Dec 8, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Dec 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/104
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.