Increased light extraction from a nitride LED
US7125734B2 · kind B2 · utility
45Cited by
17References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
In a method for fabricating a flip-chip light emitting diode device, a submount wafer is populated with a plurality of the light emitting diode dies. Each device die is flip-chip bonded to the submount. Subsequent to the flip-chip bonding, a growth substrate is removed. The entire submount is immersed in the etchant solution, exposed to the light for a prespecified period of time, removed from the solution, dried and diced into a plurality of LEDs. The LEDs are immediately packaged without any further processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.