Photoelectric conversion device and camera using photoelectric conversion device
US7126102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | May 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
Abstract
A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.