Storage device
US7126152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | May 13, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.