Magnetic random access memory
US7126201B2 · kind B2 · utility
20Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jul 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer (11) which has a reversible free spontaneous magnetization, a fixed layer (6) which has fixed spontaneous magnetization, and a spacer layer (10) formed of non-magnetic interposed between the free layer (11) and the fixed layer (6). The fixed layer (6) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.