Low-noise CMOS active pixel
US7126636B2 · kind B2 · utility
Inventor
Key dates
| Filing date | May 14, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/65
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A low-noise CMOS active pixel for image sensors comprises a photosensitive element (PD), a feedback capacitive element (CF) with a capacitance CF, and four transistors, namely a first transistor (M1), two reset transistors (M3, M4) and one pixel selection transistor (M2). These components are laid out and controlled in such a way that the first transistor (M1) is mounted as an amplifier during the pixel reset phase and as a follower during the read phase. The reset transistors (M3, M4) are parallel-connected so that one of them (M4) compensates for the negative effects of the other transistor (M3) on the node common to the two transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.