Nitride based semiconductor laser diode device with a bar mask
US7126972B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jan 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.