Planarizing method employing hydrogenated silicon nitride planarizing stop layer
US7129151B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Nov 4, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material provides the planarizing stop layer with enhanced planarizing stop properties. The method is particularly useful within the context of CMP planarizing methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.