Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch
US7129184B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Dec 1, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Dec 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing a silicon layer or substrate surface for growing an epitaxial layer of SiGe thereon. The process comprises removing native oxide from the surface of the silicon with an HF solution, and then oxidizing the exposed silicon surface to form a chemically formed layer of silicon oxide of the process damaged silicon surface. The chemically formed layer of silicon oxide is then removed by a second HF cleaning process so as to leave a smooth silicon surface suitable for growing a SiGe layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.