Electromagnetic radiation emitting semiconductor chip and procedure for its production

US7129528B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Dominik Eisert · Regensberg, DE
• Berthold Hahn · Hemau, DE
• Stephan Kaiser · Regensburg, DE

Key dates

• Filing date: Sep 25, 2003
• Grant date: Oct 31, 2006
• Expiry date: Sep 25, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more like…