Electrostatic discharge protection device
US7129546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Nov 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
An ESD protection device. The ESD protection device has a substrate; a channel region, a source region, and a drain region. The channel region is formed on a predetermined area of a surface of the substrate, the channel region has a first side and a second side. The source region is formed adjacent to the first side. The drain region which has a heavily doped region and a lightly doped region formed below the heavily doped region is formed adjacent to the second side. The width along a longitudinal axis of the heavily doped region has variable length and thus the length between one side of the heavily doped region to the second side has variable length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.