Silicon oxynitride passivated rare earth activated thioaluminate phosphors for electroluminescent displays
US7129633B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 12, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Dec 11, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A novel structure is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a silicon oxynitride layer provided directly adjacent the top and/or bottom of the phosphor thin film layer, wherein said silicon oxynitride layer comprises a composition of Si3NxOyHz where 2≦x≦4, 0<y≦2 and 0≦z≦1. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.