Thin film bulk acoustic wave resonator and production method of the same
US7129806B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Apr 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/172
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film bulk acoustic wave resonator and method of producing same are provided. The thin film bulk acoustic wave resonator has a superior resonance characteristic (e.g., high-orientation and densification of a piezoelectric film), wherein the thin film bulk acoustic wave resonator that a local stress to a piezoelectric film is relaxed and improvement of productivity due to a stable structure without causing a crack of the piezoelectric film and high yield and a corresponding cost-reduction are realized, and the production method of the same, such as in an air bridge type thin film bulk acoustic wave resonator. In a region including a substrate, a support layer formed convexly on the substrate and a gap upper that the support layer, laminate of a bottom electrode, a piezoelectric film and a top electrode is formed, where the laminate is formed on the substrate and the support layer. The gap is formed between the support layer and the bottom electrode so that at least a portion of it is located upper than a surface of the support layer, and composes (makes up) a resonance region. For example, the support layer has a height of 20% or more of the maximum height from the support lay…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.