Side shielded current in plane spin-valve
US7130165B2 · kind B2 · utility
13Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The magnetoresistive sensor has an MR stack and side shields formed by contacts and/or pedestals on either side of the MR stack. The materials for the contacts and pedestals are selected to be magnetically soft, electrically conductive and have a low AMR signal. The contacts and pedestals are magnetically decoupled from the hard bias materials by placement of spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.