Field effect device with a channel with a switchable conductivity
US7130212B2 · kind B2 · utility
3Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A field effect device (2) includes a source electrode (14), a drain electrode (16), a channel (24) formed between the source electrode (14) and the drain electrode (16), and a gate electrode (22) separated from the channel (24) by an insulating layer (20), wherein the channel (24) comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.