Electrooptic Q-switch element made of crystal
US7130318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2003 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Jul 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of La3Ga5SiO14 or Nd:La3Ga5SiO14 or the other related crystal materials such as La3Ga5-xAlxSiO14, Sr3Ga2Ge4SiO14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga5.5Nb0.5O14 and La3Ga5.5Ta0.5O14 with the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.