Semiconductor device with trench structure and method for manufacturing the same
US7132347B2 · kind B2 · utility
3Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Sep 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.