Nanosilicon light-emitting element and manufacturing method thereof
US7132692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/826
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOx film 2 consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate 1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon 4a of about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment 5 and thermal oxidation treatment 6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage 7 at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.