Light emitting diode having a dual dopant contact layer
US7132695B2 · kind B2 · utility
17Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Oct 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.