Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof
US7132787B2 · kind B2 · utility
35Cited by
8References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/14
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed herein are multilayer polymer-quantum dot light emitting diodes (PQD-LEDs) and methods of making thereof. As disclosed, the PQD-LEDs comprise at least one quantum dot layer made from an aqueous suspension of quantum dots upon which a polymer layer is deposited by spin coating methods known in the art. The quantum dot layers and the polymer layers are discrete and distinct from one another. Also disclosed are methods of making the PQD-LEDs of the present invention and kits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.