Semiconductor laser device and method for fabricating the same
US7133431B2 · kind B2 · utility
37Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Feb 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.