Process of forming a capacitative audio transducer
US7134179B2 · kind B2 · utility
13Cited by
13References
5Claims
0Family size
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Key dates
| Filing date | Dec 13, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | May 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.