Methods for residue removal and corrosion prevention in a post-metal etch process
US7134941B2 · kind B2 · utility
7Cited by
85References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 2005 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jan 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method of plasma assisted CO2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N2 or H2O. The process removes polymer residues present on a metal layer on a substrate and on the sidewalls of metal lines and inhibits chlorine-based corrosion while being very selective to exposed Ti, TiN, Al and SiO2. The invention is particularly suited for removing post metal etch polymer residue from top and sidewall of metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.