Coating silicon pellets with dopant for addition of dopant in crystal growth
US7135069B2 · kind B2 · utility
3Cited by
8References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Sep 23, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.