Method for fabricating single crystal silicon film
US7135388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Dec 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.