Method for etching mesa isolation in antimony-based compound semiconductor structures
US7135411B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Sep 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4732
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30–42) formed over the substrate structure (10) are dry etched to form device mesas (12) and the buffer cap (26) provides a desirably smooth mesa floor and electrical isolation around the mesas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.